Fast Timing Methods for Semiconductor Detectors
- 1 June 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (3) , 1142-1158
- https://doi.org/10.1109/tns.1982.4336333
Abstract
This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, "noiseless" input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter.Keywords
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