Stimulated emission in strained GaAs1−xPx-GaAs1−yPy superlattices
- 1 February 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (3) , 257-259
- https://doi.org/10.1063/1.93888
Abstract
Photoluminescence data are presented on a direct‐well GaAs1−xPx‐GaAs (x∼0.25) strained superlattice (SL) (barrier LB ∼75 Å, quantum well Lz∼75 Å) and on indirect‐well GaP‐GaAs1−xPx (x∼0.6) strained SL’s (LB, Lz∼120 Å and LB, Lz∼60 Å) grown by organometallic vapor phase epitaxy. Stimulated emission (at 300 and at 77 K) is observed in the former but only weak luminescence in the latter, thus establishing that a large density of defects at the heterointerfaces is not necessarily an issue in strained SL’s and that so far zone‐folding effects, and SL ‘‘indirect‐direct’’ conversion, have not been observed in indirect systems.Keywords
This publication has 6 references indexed in Scilit:
- The dynamics of electron-hole collection in quantum well heterostructuresJournal of Applied Physics, 1982
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982
- Electronic band structure of (001) GaAs-AlAs superlatticesSolid State Communications, 1982
- The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxyJournal of Electronic Materials, 1982
- Absorption and stimulated emission in an AlAs-GaAs superlatticeApplied Physics Letters, 1981
- GaAs-GaAsP Heterostructure Injection LasersJournal of the Electrochemical Society, 1971