Supervisory run-to-run control of polysilicon gate etch using in situ ellipsometry
- 1 May 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 7 (2) , 193-201
- https://doi.org/10.1109/66.286855
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Run by run process control: combining SPC and feedback controlIEEE Transactions on Semiconductor Manufacturing, 1995
- Modeling and control of microelectronics materials processingComputers & Chemical Engineering, 1995
- On‐Line Inference of Plasma Etch Uniformity Using In Situ EllipsometryJournal of the Electrochemical Society, 1994
- Optimal Adjustment in the Presence of Deterministic Process Drift and Random Adjustment ErrorTechnometrics, 1993
- Algorithmic Statistical Process Control: An ElaborationTechnometrics, 1993
- Optimal Controllers for Nonsymmetric and Nonquadratic Loss FunctionsTechnometrics, 1992
- Algorithmic Statistical Process Control: Concepts and an ApplicationTechnometrics, 1992
- Statistical Process Monitoring and Feedback Adjustment: A DiscussionTechnometrics, 1992
- Adaptive control of photolithographyAIChE Journal, 1992
- Development of Techniques for Real‐Time Monitoring and Control in Plasma Etching: II . Multivariable Control System Analysis of Manipulated, Measured, and Performance VariablesJournal of the Electrochemical Society, 1991