Recombination kinetics of the excitons in GaP:N electroluminescent diodes
- 1 February 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (2) , 403-407
- https://doi.org/10.1016/0038-1101(78)90270-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Modelling of electroluminescent GaP diodes I (V) and L (V) characteristicsSolid-State Electronics, 1977
- Recombination Processes Responsible for the Room-Temperature Near-Band-Gap Radiation from GaPPhysical Review B, 1973
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952