Room-Temperature Epitaxial Growth of CeO2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
- 1 June 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (6A) , L688
- https://doi.org/10.1143/jjap.34.l688
Abstract
Room-temperature (20° C) epitaxy of high-melting point CeO2 thin films was achieved for the first time on Si(111) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.Keywords
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