High efficiency Cu(In,Ga)Se/sub 2/-based solar cells: processing of novel absorber structures
Open Access
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 68-75
- https://doi.org/10.1109/wcpec.1994.519811
Abstract
Our effort towards the attainment of high performance devices has yielded several devices with total-area conversion efficiencies above 16%, the highest measuring 16.8% under standard reporting conditions (ASTM E892-87, Global 1000 W/m/sup 2/). The first attempts to translate this development to larger areas resulted in an efficiency of 12.5% for a 16.8-cm/sup 2/ monolithically interconnected submodule test structure, and 15.3% for a 4.85-cm/sup 2/ single cell. Achievement of a 17.2% device efficiency fabricated for operation under concentration (22-sun) is also reported. All high efficiency devices reported here are made from graded bandgap absorbers. Bandgap grading is achieved by compositional Ga/(In+Ga) profiling as a function of depth. The fabrication schemes to achieve the graded absorbers, the window materials and contacting are described.Keywords
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