Photoluminescence Study of Electron Wave Confinement in Multi-Quantum Barrier (MQB)
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11A) , L1969
- https://doi.org/10.1143/jjap.29.l1969
Abstract
We have confirmed the enhancement of electron wave confinement of GaAs/AlGaAs multi-quantum barrier (MQB) using photoluminescence (PL) measurement. We observed less saturated PL excitation dependence and less sensitive temperature dependence. This could be due to the quantum enhancement in the potential barrier of the MQB structure, and shows a superior carrier confinement of MQB over a classical bulk barrier.Keywords
This publication has 12 references indexed in Scilit:
- Short-wavelength (638 nm) room-temperature CW operation of InGaAlP laser diodes with quaternary active layerElectronics Letters, 1990
- Perpendicular transport of photoexcited electrons and holes in GaAs/AlAs short-period superlattices: Barrier-thickness and temperature dependencePhysical Review B, 1989
- Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structuresApplied Physics Letters, 1989
- Electron reflectance of multiquantum barrier (MQB)Electronics Letters, 1986
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- High-purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layerJournal of Applied Physics, 1985
- Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasersElectronics Letters, 1985
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasersElectronics Letters, 1980
- Tunneling in a finite superlatticeApplied Physics Letters, 1973