Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

Preprint

17 February 2004

preprint
Published by arXiv in arXiv

Abstract

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

Keywords

POSITION DEPENDENCE
CMS PIXEL DETECTOR
CHARGE COLLECTION
PIXEL DETECTOR
READOUT CHIP
SENSOR
CERN
R&D

All Related Versions

Version 1, 2003-12-02, ArXiv
Version 2, 2003-12-10, ArXiv
Version 3, 2004-02-16, ArXiv
Version 4, 2004-02-17, ArXiv
Version 5, 2004-03-04, ArXiv
Published version: IEEE Transactions on Nuclear Science, 51 (3), 1150.

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