Sensor Development for the CMS Pixel Detector

Preprint

16 February 2004

preprint
Published by arXiv in arXiv

Abstract

This paper reports on a current R&D activity for the sensor part of the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence of 1E15 (1MeV Neutron)/cm**2 at the CERN PS. Afterwards they have been bump bonded to unirradiated readout chips. The chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The samples have been tested using high energy pions in the H2 beam line of the CERN SPS in June and September 2003. The results of this test beam are presented and the differences between the sensor options are discussed.

Keywords

CMS PIXEL DETECTOR
PIXEL DETECTOR
READOUT
NEUTRON
SENSOR
CERN
BEAM
R&D

All Related Versions

Version 1, 2003-12-02, ArXiv
Version 2, 2003-12-10, ArXiv
Version 3, 2004-02-16, ArXiv
Version 4, 2004-02-17, ArXiv
Version 5, 2004-03-04, ArXiv
Published version: IEEE Transactions on Nuclear Science, 51 (3), 1150.

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