Measurement of the interfacial energy between amorphous Si and crystalline Si
- 1 July 1991
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 53 (1) , 32-34
- https://doi.org/10.1007/bf00323431
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Heat of crystallization and melting point of amorphous siliconApplied Physics Letters, 1983
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Kinetics of Phase Change. I General TheoryThe Journal of Chemical Physics, 1939