On the annihilation of oxidation induced stacking faults in silicon
- 1 November 1974
- journal article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 30 (5) , 1081-1090
- https://doi.org/10.1080/14786437408207260
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Oxidation-induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics, 1974
- Irradiation creep produced by the effect of stress on the nucleation of dislocation loopsPhilosophical Magazine, 1973
- Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidationJournal of Applied Physics, 1973
- Generation of Dislocations and Stacking Faults at Surface Heterogeneities in SiliconJournal of Applied Physics, 1972
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969
- Stacking Faults in Annealed Silicon SurfacesJournal of Applied Physics, 1969
- Two-dimensional defects in silicon after annealing in wet oxygenPhilosophical Magazine, 1965
- Direct observations of interactions between imperfect loops and moving dislocations in aluminiumPhilosophical Magazine, 1964
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961