Two-dimensional defects in silicon after annealing in wet oxygen
- 1 June 1965
- journal article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 11 (114) , 1303-1308
- https://doi.org/10.1080/14786436508224937
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Growth of Lattice Defects in Silicon during OxidationJournal of Applied Physics, 1964
- Partial dislocations associated with NbC precipitation in austenitic stainless steelsPhilosophical Magazine, 1964
- A non-destructive direct carbon-replica method for examination of si surfacesJournal of Scientific Instruments, 1964
- Surface damage on abraded silicon specimensPhilosophical Magazine, 1963
- Surface Damage and Copper Precipitation in SiliconPhysica Status Solidi (b), 1963
- Method of preparing Si and Ge specimens for examination by transmission electron microscopyBritish Journal of Applied Physics, 1962