High contrast, 1.3 μm optical AND gate with gain
- 2 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (22) , 1510-1512
- https://doi.org/10.1063/1.96903
Abstract
A high contrast (5:1), 1.3 μm wavelength optical and gate is demonstrated using a bistable Fabry–Perot InGaAsP/InP laser amplifier with large gain. Using simple arguments, it is shown that, subject to realistic constraints, the maximum attainable contrast ratio in a bistable Fabry–Perot logic gate is about 10. Unlike bistable amplifiers, there is a significant trade-off between contrast and gain in passive devices.Keywords
This publication has 9 references indexed in Scilit:
- Femtojoule optical switching in nonlinear semiconductor laser amplifiersApplied Physics Letters, 1986
- Extremely Low Switching Energy Optical Bistable DevicesOptical Engineering, 1986
- Measurement of optical bistability in an InGaAsP laser amplifier at 1.5 μmElectronics Letters, 1985
- A comparison of active and passive optical bistability in semiconductorsIEEE Journal of Quantum Electronics, 1985
- 3-pJ, 82-MHz optical logic gates in a room-temperature GaAs-AlGaAs multiple-quantum-well étalonApplied Physics Letters, 1985
- Room-temperature optical bistability in InGaAsP/InP amplifiers and implications for passive devicesApplied Physics Letters, 1985
- Optical information processing based on an associative-memory model of neural nets with thresholding and feedbackOptics Letters, 1985
- High gain signal amplification in an InSb transphasor at 77 KApplied Physics Letters, 1983
- Realization of an InSb bistable device as an optical a n d gate and its use to measure carrier recombination timesApplied Physics Letters, 1983