Studies of divacancy in Si using positron lifetime measurement
- 1 December 1994
- journal article
- Published by Springer Nature in Hyperfine Interactions
- Vol. 84 (1) , 397-406
- https://doi.org/10.1007/bf02060688
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Positron Annihilation Study of Defects Created in Silicon Irradiated with Electrons of High EnergyPhysica Status Solidi (a), 1990
- Positron trapping in semiconductorsPhysical Review B, 1990
- Positron trapping rates and their temperature dependencies in electron-irradiated siliconPhysical Review B, 1989
- Temperature characteristics of positron trapping at defects in electron-irradiated siliconApplied Physics A, 1989
- Annihilation of Positrons in Electron‐Irradiated Silicon CrystalsPhysica Status Solidi (b), 1978
- Influence of defects and temperature on the annihilation of positrons in neutron-irradiated siliconPhysical Review B, 1976
- Electron-irradiation-induced divacancy in lightly doped siliconJournal of Applied Physics, 1976
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Electron Bombardment of SiliconPhysical Review B, 1959