High power microwave SiC MESFET technology

22 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/edmo.1999.821462

Abstract

A silicon carbide MESFET technology has been established. Single finger and multifinger power devices have been fabricated. Ft and Fmax of 6 and 18 GHz respectively were obtained from single finger devices. Current instabilities have been observed under CW operation, although microwave power densities of 2.5 W/mm have been achieved under pulsed operation at 2-4 GHz. A maximum power of 6.8 W has been achieved from a single device, and over 16 W from a single chip with three devices bonded together, these devices were measured pulsed at 4 GHz.

Keywords

SILICON CARBIDE
MESFETS
MICROWAVE TECHNOLOGY
FINGERS
PULSE MEASUREMENTS
SURFACE TREATMENT
MICROWAVE DEVICES
GALLIUM NITRIDE
ETCHING
CURRENT MEASUREMENT

This publication has 1 reference indexed in Scilit:

Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers
Materials Science Forum, 1998