Homogeneious linewidth and relaxation of excited hole states in II–VI quantum dots
- 1 January 1994
- journal article
- Published by Wiley in Advanced Materials for Optics and Electronics
- Vol. 3 (1-6) , 141-150
- https://doi.org/10.1002/amo.860030121
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Surface-polarization instabilities of electron-hole pairs in semiconductor quantum dotsPhysical Review B, 1992
- Optical- and acoustical-phonon-assisted hopping of localized excitons in CdTe/ZnTe quantum wellsPhysical Review B, 1992
- Spectral hole-burning in quantum confined semiconductor microcrystalsSuperlattices and Microstructures, 1991
- Photoluminescence study of Schott commercial and experimental CdSSe-doped glasses: observation of surface statesJournal of the Optical Society of America B, 1991
- High-excitation photoluminescence studies of CdS1?x Se x quantum dotsZeitschrift für Physik B Condensed Matter, 1990
- Theory of optically excited intrinsic semiconductor quantum dotsPhysical Review B, 1990
- Quantum-dot size-distribution analysis and precipitation stages in semiconductor doped glassesJournal of Applied Physics, 1990
- Room‐Temperature Optical Nonlinearity in Semiconductor‐Doped GlassesPhysica Status Solidi (b), 1988
- Quantum size effects in optical properties of CdS-glass compositesPhysical Review B, 1988
- Quantum confinement effects of semiconducting microcrystallites in glassJournal of Applied Physics, 1987