Optical- and acoustical-phonon-assisted hopping of localized excitons in CdTe/ZnTe quantum wells
- 15 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (8) , 4253-4257
- https://doi.org/10.1103/physrevb.45.4253
Abstract
Interaction with both acoustical as well as optical phonons contributes to the relaxation of excitons in tail states of coherently strained CdTe/ZnTe quantum wells. The contribution of acoustical phonons is most important in the thinnest well of 1.8 monolayers. Hopping down, which involves the emission of acoustic phonons, leads to a redshift of the luminescence band of about 10 meV within the first 200 ps after excitation. A comparison of the experimental data with results of a quantitative theory allows us to evaluate the concentration of localized states involved in the relaxation process.Keywords
This publication has 15 references indexed in Scilit:
- Hot-exciton relaxation inTe/ZnTe multiple quantum wellsPhysical Review Letters, 1991
- Relaxation of excitons in coherently strained CdTe/ZnTe quantum wellsPhysical Review B, 1991
- Measurement of phonon-assisted migration of localized excitons in GaAs/AlGaAs multiple-quantum-well structuresPhysical Review Letters, 1990
- Quasi-two-dimensional excitons in a strongly localized regime in CdTe-ZnTe superlatticesPhysical Review B, 1986
- Diffusion and relaxation of energy in disordered organic and inorganic materialsPhysical Review B, 1986
- Hopping in Exponential Band TailsPhysical Review Letters, 1985
- Subnanosecond spectroscopy of disorder-localized excitons in CdPhysical Review B, 1983
- Optical Detection of Multiple-Trapping Relaxation in Disordered Crystalline SemiconductorsPhysical Review Letters, 1982
- Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorPhysical Review B, 1982
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981