A new high speed I/sup 2/L structure
- 1 April 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 12 (2) , 114-118
- https://doi.org/10.1109/jssc.1977.1050857
Abstract
A new improved I/SUP 2/L structure is discussed which has been shown to operate at high speeds with large fan-out capabilities while retaining low power operation. The new `up-diffused' structure is fabricated in such a fashion that Schottky diodes can be readily incorporated. With the addition of Schottky clamps between the collector and base of the n-p-n switching transistor, gate delays as low as 2.5 ns have been achieved.Keywords
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