Electron microscope image profiles of planar defects in crystals
- 1 March 1967
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 15 (135) , 523-527
- https://doi.org/10.1080/14786436708220899
Abstract
Bright- and dark-field electron microscope image profiles of inclined planar defects in crystals have been calculated, using the two-beam approximation, under a variety of diffraction and absorption conditions. It is found that the form of the fringe profiles depends in a complicated manner on the values of α—the fault phase angle, ω—the deviation from Bragg reflecting position, andξg/ξg—the ratio of the extinction distance to the anomalous absorption length. Many of the effects discussed have been observed in electron micrographs of stacking faults in thin foils of silicon.Keywords
This publication has 6 references indexed in Scilit:
- Diffraction contrast effects from stacking faults with phase angle ?Philosophical Magazine, 1965
- A relation between dark field electron micrographs of lattice defectsPhilosophical Magazine, 1964
- Fringe Patterns at Anti‐Phase Boundaries with α = π Observed in the Electron MicroscopePhysica Status Solidi (b), 1964
- Anomalous electron absorption effects in metal foils: theory and comparison with experimentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Diffraction contrast of electron microscope images of crystal lattice defects. III. Results and experimental confirmation of the dynamical theory of dislocation image contrastProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Diffraction contrast of electron microscope images of crystal lattice defects - II. The development of a dynamical theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1961