Fabrication of gatable submicron channels in AlxGa1−xAs-GaAs heterostructures

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Abstract
A new, simplified process has been developed for fabricating submicron AlxGa1−xAs‐GaAs heterostructure devices for low‐temperature transport studies, with the advantage of gatability. This process utilizes electron beam lithography, photolithography, and wet etching techniques to laterally confine the two‐dimensional electron gas, and possesses the unique feature that the metal etch mask for the electron beam defined narrow section is deposited directly on top of the heterostructure surface, allowing for use as a gate. Devices of lithographic widths from 0.4 to 2.0 μm have been successfully fabricated, where the 0.4 μm devices of both enhancement and depletion modes have been demonstrated to function down to 0.35 K in temperature.