Dynamic current-voltage characteristics of III-N HFETs
- 3 November 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (11) , 680-682
- https://doi.org/10.1109/led.2003.818889
Abstract
A comparative study of the dynamic current-voltage (DI-V) characteristics of III-N heterojunction and double heterojunction field-effect transistors (HFETs and DHFETs) reveals that the current and RF power collapse in HFETs arise from modulation of device series resistances under large input signal. A model based on space-charge limited current through the depletion regions formed at the gate edges due to the charge trapping explains the DI-V behavior and other observations related to the RF current collapse in III-N HFETs.Keywords
This publication has 11 references indexed in Scilit:
- Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditionsIEEE Transactions on Microwave Theory and Techniques, 2003
- Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applicationsIEEE Transactions on Microwave Theory and Techniques, 2003
- Trapping effects in GaN and SiC microwave FETsProceedings of the IEEE, 2002
- Coupled surface and channel transport in semiconductor heterostructuresJournal of Applied Physics, 2001
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect TransistorJapanese Journal of Applied Physics, 2001
- Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistorsApplied Physics Letters, 2001
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001
- Drain current compression in GaN MODFETs underlarge-signalmodulation at microwave frequenciesElectronics Letters, 1999
- Large signal frequency dispersion of AlGaN/GaNheterostructure fieldeffect transistorsElectronics Letters, 1999
- GaAs Devices and CircuitsPublished by Springer Nature ,1987