Drain current compression in GaN MODFETs underlarge-signalmodulation at microwave frequencies
- 5 August 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (16) , 1380-1382
- https://doi.org/10.1049/el:19990957
Abstract
It is shown that the discrepancy between the measured microwave power performance of GaN MODFETs and the prediction based on the DC characteristics is caused by the trapping of mobile electrons in the channel under large-signal modulation. This phenomenon manifests itself in the compression of the drain current. The strong dependence of the level of current compression on the gate bias voltage indicates that carrier trapping take place in the AlGaN barrier or at the surface of the device.Keywords
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