Microstructural Variations in Radiation Hard and Soft Oxides Observed through Electron Spin Resonance
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4602-4604
- https://doi.org/10.1109/tns.1983.4333179
Abstract
We find that the radiation tolerance of MOS oxides is correlated with two "trivalent silicon" centers, one in the oxide (E'), one at the Si/SiO2 interface (Pb). We earlier demonstrated a strong correlation between radiation induced Pb concentration and raradiation induced interface state density in relatively soft dry oxide structures. In this paper we report a similar correlation between the density of E' centers (likely holes trapped in oxygen vacancies) and the density of holes trapped in the oxide. We thus have obtained evidence for a microstructural model of both interface states and hole traps. Processing improvement efforts may now be guided by some fundamental understanding of the device degradation process.Keywords
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