Drift-aiding fringing fields in charge-coupled devices
- 1 October 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 6 (5) , 322-326
- https://doi.org/10.1109/jssc.1971.1050194
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A memory system based on surface-charge transportPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1971
- Charge Coupled Semiconductor DevicesBell System Technical Journal, 1970
- Power and surface-state loss analysis of charge-coupled devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1970
- Integrated MOS and bipolar analog delay lines using bucket-brigade capacitor storagePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1970