Charge Coupled Semiconductor Devices
- 1 April 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 49 (4) , 587-593
- https://doi.org/10.1002/j.1538-7305.1970.tb01790.x
Abstract
In this paper we describe a new semiconductor device concept. Basically, it consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge (representing information) over the surface by moving the potential minima. We discuss schemes for creating, transferring, and detecting the presence or absence of the charge. In particular, we consider minority carrier charge storage at the Si-SiO 2 interface of a MOS capacitor. This charge may be transferred to a closely adjacent capacitor on the same substrate by appropriate manipulation of electrode potentials. Examples of possible applications are as a shift register, as an imaging device, as a display device, and in performing logic.This publication has 4 references indexed in Scilit:
- Experimental Verification of the Charge Coupled Device ConceptBell System Technical Journal, 1970
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967
- Minority carrier lifetime determination from inversion layer transient responseIEEE Transactions on Electron Devices, 1967
- TRANSIENT VOLTAGE BREAKDOWN DUE TO AVALANCHE IN MIS CAPACITORSApplied Physics Letters, 1966