Experimental Verification of the Charge Coupled Device Concept
- 1 April 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 49 (4) , 593-600
- https://doi.org/10.1002/j.1538-7305.1970.tb01791.x
Abstract
Structures have been fabricated consisting of closely spaced MOS capacitors on an n-type silicon substrate. By forming a depletion region under one of the electrodes, minority carriers (holes) may be stored in the resulting potential well. This charge may then be transferred to an adjacent electrode by proper manipulation of electrode potentials. The assumption that this transfer will take place in reasonable times with a small fractional loss of charge is the basis of the charge coupled devices described in the preceding paper, 1 To test this assumption, devices were fabricated and measurements made. Charge transfer efficiencies greater than 98 percent for transfer times less than 100 nsec were observed.This publication has 3 references indexed in Scilit:
- Charge Coupled Semiconductor DevicesBell System Technical Journal, 1970
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967
- Minority carrier lifetime determination from inversion layer transient responseIEEE Transactions on Electron Devices, 1967