Influence of rta on the structures of BTO thin films and their physical properties
- 1 May 1997
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 195 (1) , 229-232
- https://doi.org/10.1080/00150199708260527
Abstract
The BTO thin films on Si(100) substrate have been prepared by hot wall MOCVD at different temperatures ranged from 400°C to 750°C. The influence of RTA on the structures and some physical properties of these BTO films have been studiedKeywords
This publication has 1 reference indexed in Scilit:
- Preparation and properties of Bi4Ti3O12 single-crystal thin films by atmospheric pressure metalorganic chemical vapor depositionJournal of Applied Physics, 1993