Preparation and properties of Bi4Ti3O12 single-crystal thin films by atmospheric pressure metalorganic chemical vapor deposition
- 1 June 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (11) , 7963-7965
- https://doi.org/10.1063/1.353929
Abstract
Bismuth titanate (Bi4Ti3O12) thin films have been grown on (100) silicon substrates at 550 °C by atmospheric pressure metalorganic chemical vapor deposition using Bi (C6H5)3 and Ti (OC4H9)4 as the source materials. The x‐ray diffraction analysis and reflection electron diffraction pattern revealed that the film is a single crystal with a (100) orientation. Ferroelectric properties were confirmed by polarization hysteresis curve observation. The remanent polarization and coercive field were found to be 38 μC/cm2 and 45 kV/cm, respectively. The measured dielectric constant and loss tangent were 93 and 0.05, respectively, at room temperature.This publication has 4 references indexed in Scilit:
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- Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser depositionApplied Physics Letters, 1990
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