Single mode, high power GaAlAs/GaAs lasers

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Abstract
A new channeled-substrate narrow stripe laser with double current confinement and large optical cavity has been developed. This laser incorporates symmetrical waveguiding layers to form the large cavity and additional reverse biased p-n junction to confine the current. Light output up to 60 mW with stable single longitudinal and spatial modes is obtained in cw operation at room temperature. Threshold current as low as 15 mA and differential quantum efficiency as high as 70% are achieved. Furthermore, high quality beam with far-field angle of 32°×10° (full width at half-maximum) is maintained throughout the whole power range.