Characteristics and analysis of channeled substrate narrow stripe GaAs/GaAlAs lasers

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Abstract
An optimization of channeled substrate narrow stripe GaAs/GaAlAs lasers for operation in the zero‐order transverse mode to output powers of 10 mW is described. A correlation between zero‐order mode power and substrate‐induced optical loss is demonstrated. The devices fabricated have threshold currents around 30 mA, highly linear transfer characteristics, and exhibit quasisingle longitudinal mode behavior. Transient response measurements show device suitability for G bit/s optical communication systems. Preliminary lifetest results indicate a median life of over 10 000 h at 70 °C and 2‐mW output. A computer model of liquid phase epitaxial growth over channels and a theoretical analysis of the waveguide structure grown show good agreement with experiment.