Enhanced degradation rates in temperature-sensitive Ga1-xAlxAs lasers
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 13 (8) , 696-699
- https://doi.org/10.1109/jqe.1977.1069424
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Statistical characterization of the lifetimes of continuously operated (Al,Ga)As double-heterostructure lasersApplied Physics Letters, 1976
- Continuous operation over 10 000 h of GaAs/GaAlAs double-heterostructure laser without lattice mismatch compensationApplied Physics Letters, 1975
- Threshold temperature characteristics of double heterostructure Ga1−xAlxAs lasersJournal of Applied Physics, 1975
- Reliability of DH GaAs lasers at elevated temperaturesApplied Physics Letters, 1975
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974