Reliability of DH GaAs lasers at elevated temperatures
- 1 March 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (5) , 239-242
- https://doi.org/10.1063/1.88135
Abstract
Data from accelerated aging tests on continuously operating stripe−geometry double−heterostructure GaAs lasers are presented. By extrapolating data obtained in dry−nitrogen ambients at temperatures of 90, 70, and 50 °C, it is concluded that continuous room−temperature operation of these devices as lasers with power outputs exceeding 1 mW per laser face for times in excess of 100000 h is possible.Keywords
This publication has 17 references indexed in Scilit:
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- Threshold reduction by the addition of phosphorus to the ternary layers of double-heterostructure GaAs lasersApplied Physics Letters, 1974
- Degradation-induced microwave oscillations in double-heterostructure injection lasersApplied Physics Letters, 1974
- Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substratesApplied Physics Letters, 1973
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. I. Emission spectraJournal of Applied Physics, 1973
- Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 hApplied Physics Letters, 1973
- Strain-induced degradation of GaAs injection lasersApplied Physics Letters, 1973
- DEGRADATION AND PASSIVATION OF GaP LIGHT-EMITTING DIODESApplied Physics Letters, 1971
- Role of optical flux and of current density in gradual degradation of GaAs injection lasersIEEE Journal of Quantum Electronics, 1969
- Noncatastrophic degradation of GaAs lasers under CW operationIEEE Journal of Quantum Electronics, 1968