Optical and electrical properties of heavily indium-doped CdS around the semiconductor-metal phase transition
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 497-501
- https://doi.org/10.1016/0022-0248(90)91023-j
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Fluorescence spectrum of heavily doped cadmium sulphidePhysical Review B, 1978
- Screening and Stark Effects Due to Impurities on Excitons in SemiconductorsJournal of the Physics Society Japan, 1970
- Screening and Stark Effects Due to Impurities on Excitons in CdSJournal of the Physics Society Japan, 1970
- Impurity Conduction in Cadmium Sulfide at Low TemperaturesJournal of the Physics Society Japan, 1968