Light emission from high bias Al-AlOx-Au tunnel junctions
- 1 January 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (1) , 373-375
- https://doi.org/10.1063/1.342550
Abstract
An observation of the Al‐AlOx‐Au light emitting tunneling junctions deposited on the underlayers of CaF2 has been made. The applied bias can be up to 5.12 V at room temperature, and the efficiencies were in the 10−4 range and one order higher than before. The emission spectra are characterized by the cutoff frequency near 3.26 eV and the lack of the emission from the radiative mode of surface plasmon polariton.This publication has 13 references indexed in Scilit:
- Prism-Coupled Light Emission from Tunnel JunctionsPhysical Review Letters, 1985
- Observation and explanation of light-emission spectra from statistically rough Cu, Ag, and Au tunnel junctionsPhysical Review B, 1984
- Study of surface roughness for thin films of CaF2 deposited on glass substratesOptics Communications, 1983
- Optical spectra and angular dependence of the visible light emitted by metal-insulator-metal tunnel junctionsSolid State Communications, 1981
- Roughness and the mean free path of surface polaritons in tunnel-junction structuresPhysical Review B, 1980
- Photon emission from slightly roughened tunnel junctionsPhysical Review B, 1979
- Role of Local Plasmon Modes in Light Emission from Small-particle Tunnel JunctionsPhysical Review Letters, 1978
- Schottky barrier diodes for low noise mixing in the far infraredApplied Physics Letters, 1978
- Light emission from gold particles excited by electron tunnelingApplied Physics Letters, 1978
- Light Emission from Inelastic Electron TunnelingPhysical Review Letters, 1976