Photoinduced hydrogen loss from porous silicon
- 5 October 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (14) , 1649-1651
- https://doi.org/10.1063/1.108440
Abstract
In this letter we show that UV illumination of porous silicon causes a decrease in its luminescence efficiency. Infrared measurements allow us to associate the efficiency decrease with a loss of hydrogen from the silicon surface. We also find that the rate at which the luminescence intensity degrades increases rapidly when the illumination energy exceeds a threshold near 3.0 eV. We conclude that the decrease in photoluminescence efficiency occurs as a result of optically induced hydrogen desorption and discuss possible explanations for the energy threshold.Keywords
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