Cubic-phase GaN light-emitting diodes
- 26 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (17) , 2498-2500
- https://doi.org/10.1063/1.123019
Abstract
The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode.Keywords
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