Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence
- 15 January 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (4) , 1881-1885
- https://doi.org/10.1103/physrevb.53.1881
Abstract
The hexagonal and cubic phases of GaN are characterized by spatially resolved cathodoluminescence (CL) spectra from micrometer-size single crystals with either hexagonal or cubic habits grown by plasma-assisted molecular-beam epitaxy. At 5 K, distinct narrow excitonic lines are found at 3.472 and 3.272 eV for the hexagonal and cubic phase, yielding energy gaps of 3.500 and 3.300 eV, respectively. Detailed temperature-and intensity-dependent CL measurements on cubic GaN crystals enable us to clearly identify the exciton (free: 3.272 eV, bound: 3.263 eV) and the donor-acceptor pair (3.150 eV) transition. Moreover, we determine the donor-band and acceptor-band transition energy for this phase. In addition, phonon replicas of the exciton line and of the donor-acceptor pair transition are observed at 3.185 and 3.064 eV, respectively.Keywords
This publication has 22 references indexed in Scilit:
- Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxyApplied Physics Letters, 1995
- Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAsJournal of Applied Physics, 1995
- Optical properties near the band gap on hexagonal and cubic GaNApplied Physics Letters, 1994
- Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical sourceJournal of Applied Physics, 1993
- Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and propertiesJournal of Applied Physics, 1993
- Epitaxial growth and characterization of zinc-blende gallium nitride on (001) siliconJournal of Applied Physics, 1992
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971