Photoluminescence associated with impurity clusters in phosphorous doped silicon
- 31 January 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 29 (1) , 1-4
- https://doi.org/10.1016/0038-1098(79)90137-6
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Photoluminescence in heavily-doped Si(P)Canadian Journal of Physics, 1978
- Biexcitons in SiSolid State Communications, 1978
- The Electron-Hole Liquid in Semiconductors: Experimental AspectsPublished by Elsevier ,1978
- On the Bound-Exciton Luminescence from Highly Doped SiliconJournal of the Physics Society Japan, 1977
- Details of the structure of bound excitons and bound multiexciton complexes in SiCanadian Journal of Physics, 1977
- Electron-hole droplets and impurity band states in heavily doped Si(P): Photoluminescence experiments and theoryPhysical Review B, 1976
- Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton ComplexesPhysical Review Letters, 1976
- Electron–Hole Droplets in Semiconducting and Metallic SiliconCanadian Journal of Physics, 1974
- Effects of Doping on the Condensed Electron–Hole State in Germanium and SiliconPhysica Status Solidi (b), 1974
- Optical Measurement of Compensation in Highly Doped SiliconPhysica Status Solidi (b), 1967