On the Bound-Exciton Luminescence from Highly Doped Silicon
- 15 November 1977
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 43 (5) , 1807-1808
- https://doi.org/10.1143/jpsj.43.1807
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- A new model for bound multiexciton complexesSolid State Communications, 1977
- Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons RevisitedPhysical Review Letters, 1976
- Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton ComplexesPhysical Review Letters, 1976
- Bound multiple-exciton complexes in silicon at high doping levels?Solid State Communications, 1974
- New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in SiPhysical Review B, 1974
- Evidence for Bound Multiple-Exciton Complexes in SiliconPhysical Review Letters, 1973
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967