Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons Revisited

We report a new series of bound-exciton lines just below the associated luminescence of single excitons bound to the shallow donor ${\mathrm{N}}_{\mathrm{C}}$. The spectral position, Zeeman effect, and behavior under optical pumping indicate origin similar to a satellite series in Si, initially attributed to recombination within multiple bound-exciton complexes at neutral donors and acceptors. We find the multiple bound-exciton model consistent with the properties of these satellite lines both in SiC and in Si, in contrast with recent claims.