Electrical behaviour of aluminium-porous silicon junctions
- 1 January 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 255 (1-2) , 258-261
- https://doi.org/10.1016/0040-6090(94)05667-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Behavior of a rectifying junction at the interface between porous silicon and its substrateJournal of Applied Physics, 1994
- Electrical properties of luminescent porous siliconJournal of Luminescence, 1993
- AC conductivity in porous siliconJournal of Luminescence, 1993
- On the transport mechanism in porous siliconApplied Physics Letters, 1993
- A study on the current-voltage characteristics of porous siliconApplied Surface Science, 1993
- Defect-assisted resonant tunneling: A theoretical modelApplied Physics Letters, 1992
- Investigations of the Electrical Properties of Porous SiliconJournal of the Electrochemical Society, 1991
- Quantum tunnelling and the temperature dependent DC conduction in low-conductivity semiconductorsJournal of Physics C: Solid State Physics, 1985