Molecular Beam Flux Monitor Using Cold Cathode Discharge Induced Emission Spectroscopy
- 1 February 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (2R)
- https://doi.org/10.1143/jjap.27.319
Abstract
Cold Cathode discharge induced Emission Spectroscopy (CCES) was developed in order to apply a multiple molecular beam flux monitor for molecular beam epitaxy. The response characteristics of the emission intensity were in proportion to the molecular beam flux intensity under the MBE growth condition. The arsenic atomic emission intensity was satisfactorily, corresponding to the As4 molecular beam pressure. The detectable wavelengths of Al, Ga and As were found to be λ (Al)=309 nm, λ (Ga)=294, 417nm and λ (As)=194nm, which did not interfere with each other. When the growth rate of Al was at 0.1 nm/s, and the CCES had an accuracy of 0.1±0.0023 nm/s. The CCES directly controlled the Ga beam flux. The Ga beam pressure directly reflected the response time of the CCES control.Keywords
This publication has 2 references indexed in Scilit:
- Structures Grown by Molecular Beam EpitaxyJournal of Vacuum Science and Technology, 1973
- THE MAGNETRON GAUGE: A COLD-CATHODE VACUUM GAUGECanadian Journal of Physics, 1959