Damage Profiles in Ion Implanted Silicon
- 16 September 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 85 (1) , K43-K46
- https://doi.org/10.1002/pssa.2210850148
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The enhancement of the anodization of ion implanted silicon and its novel applicationRadiation Effects, 1981
- Strain profiles in ion-doped silicon obtained from X-ray rocking curvesPhysica Status Solidi (a), 1980
- X-ray study of lattice strain in boron implanted laser annealed siliconJournal of Applied Physics, 1980
- X-ray determination of strain and damage distributions in ion-implanted layersApplied Physics Letters, 1979
- Spatial distribution of energy deposited into atomic processes in ion-implanted siliconRadiation Effects, 1970
- The Dynamical Theory of X-Ray DiffractionPublished by Elsevier ,1963