The enhancement of the anodization of ion implanted silicon and its novel application
- 1 January 1981
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 58 (3-4) , 109-113
- https://doi.org/10.1080/01422448108228604
Abstract
The enhancement of the anodization of silicon due to ion implantation is observed to be significant in the case of heavy ion implant with doses more than 1014 ions/cm2. The studies indicate that the chemical effect caused by the implanted ions is smaller, but the lattice defects introduced by the implantation play an important role in the enhancement of the oxidation rate. A novel application of this effect to investigate the depth profile of damage in heavy implanted silicon is shown.Keywords
This publication has 4 references indexed in Scilit:
- A comparison of calculated arsenic implantation profiles in silicon with experimental resultsPhysica Status Solidi (a), 1978
- Discussion of “Oxide Growth on Etched Silicon in Air at Room Temperature” [S. I. Raider, R. Flitsch, and M. J. Palmer (pp. 413–418, Vol. 122, No. 3)]Journal of the Electrochemical Society, 1975
- Oxide Growth on Etched Silicon in Air at Room TemperatureJournal of the Electrochemical Society, 1975
- Anodic oxidation as sectioning technique for the analysis of impurity concentration profiles in siliconThin Solid Films, 1971