Room Temperature Coulomb Oscillation of a Single Electron Switch with an Electrically Formed Quantum Dot and Its Modeling
- 1 April 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (4S)
- https://doi.org/10.1143/jjap.39.2329
Abstract
The room temperature operation of a single electron switch fabricated by conventional Si large-scale integration (LSI) technologies has been demonstrated. The quantum dot formed by the electric field effect of a dual gate structure was miniaturized to a smaller size than the state-of-the-art feature size, using the controllable process technologies such as polysilicon reoxidation and polysilicon sidewall formation. Electrical measurement showed a room temperature Coulomb oscillation and a movement of the oscillation peak in two independently controllable tunnel junctions. Based on the device physics, the modified macro modeling of fabricated single electron switches was performed. Existing concept of single electron transistor (SET) macro modeling was first applied to the experimental result, and the circuit performance of the fabricated device was effectively predicted using this modeling scheme.Keywords
This publication has 4 references indexed in Scilit:
- Macromodeling of single-electron transistors for efficient circuit simulationIEEE Transactions on Electron Devices, 1999
- Fast and long retention-time nano-crystal memoryIEEE Transactions on Electron Devices, 1996
- Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrateApplied Physics Letters, 1996
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994