Physics and technology of ultra short channel MOSFET devices
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Enhanced reliability in Si MOSFETs with channel lengths under 0.2 micronSolid-State Electronics, 1990
- Monte Carlo analysis of semiconductor devices: The DAMOCLES programIBM Journal of Research and Development, 1990
- Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET'sIEEE Transactions on Electron Devices, 1986
- An investigation of steady-state velocity overshoot in siliconSolid-State Electronics, 1985