Elimination of ‘‘pair’’ defects from GaAs layers grown by molecular beam epitaxy
- 15 December 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (12) , 1327-1329
- https://doi.org/10.1063/1.96269
Abstract
In addition to ‘‘oval’’ defects, ‘‘pair’’ defects are observed on molecular beam epitaxially grown GaAs wafers. In this letter it is demonstrated that these defects originate from sulfur on the substrate surface caused by a 4:1:1 (H2SO4:H2O2:H2O) etch. The defects can be completely eliminated by dipping the substrate in 30% HCl solution for 5 min following a sulfuric acid etch.Keywords
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