Wide temperature range, from 0 to 85°C, operation of a 1.55 µm, 40 Gbit/s InGaAlAs electro-absorption optical modulator

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6 January 2005

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 41 (1) , 35-37
https://doi.org/10.1049/el:20055733

Abstract

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Keywords

This publication has 2 references indexed in Scilit:

High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules
Electronics Letters, 2004
Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser
IEEE Journal of Selected Topics in Quantum Electronics, 1997