Carrier spilling in spreading resistance analysis of Si layers grown by molecular-beam epitaxy

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Abstract
In spreading resistance analysis, which is a method usually employed in doping profiling, carrier spilling effects become evident in doping structures in the 0.1-μm range. Profiles from spreading resistance analysis with such thin layers are to be interpreted rather in terms of ‘‘on bevel’’ carrier distribution than as actual doping profiles. Due to specific boundary conditions introduced by beveling, carrier spilling decisively depends on whether high-low or low-high transitions are considered. Using sample mounting both in standard and in upside down configuration high resolution of high-low as well as low-high transition is achieved.