Metal-semiconductor impatt diode
- 28 February 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (2) , 107-109
- https://doi.org/10.1016/0038-1101(69)90118-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- Multiple uniform layer approximation in analysis of negative resistance in p-n junction in breakdownIEEE Transactions on Electron Devices, 1967
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Beam-Lead TechnologyBell System Technical Journal, 1966
- A Silicon Diode Microwave OscillatorBell System Technical Journal, 1965